PART |
Description |
Maker |
GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
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STF23NM60N STI23NM60N STW23NM60N STP23NM60N STB23N |
N-channel 600 V - 0.150 ヘ - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh⑩ Power MOSFET N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh?/a> Power MOSFET N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh Power MOSFET N-channel 600 V - 0.150 楼? - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh垄芒 Power MOSFET
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http:// STMicroelectronics
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STP19NM65N STW19NM65N STF19NM65N STI19NM65N STB19N |
N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh Power MOSFET N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh?/a> Power MOSFET N-channel 650 V - 0.25 ヘ - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
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APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
STD11NM60N |
N-channel Second generation MDmesh Power MOSFET
|
ST Microelectronics
|
STI24NM65N STW24NM65N STB24NM65N STF24NM65N STP24N |
N-channel 650 V - 0.16 Ω - 19 A - TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh Power MOSFET N-channel 650 V - 0.16 ヘ - 19 A - TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh⑩ Power MOSFET N-channel 650 V - 0.16 Ω - 19 A - TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh?/a> Power MOSFET
|
STMicroelectronics
|
APT5010B2FLL APT5010LFLL APT5010B2 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代 Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 500V 46A 0.100 Ohm
|
Advanced Power Technology, Ltd.
|
IRLML6302PBF |
Generation V Technology Ultra Low On-Resustance P-Channel MOSFET
|
TY Semiconductor Co., Ltd
|
STD11NM60N-108 STF11NM60N STD11NM60N STP11NM60N ST |
N-channel 600 V - 0.37 楼? - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh垄芒 Power MOSFET N-channel 600 V - 0.37 Ω - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh?/a> Power MOSFET N-channel 600 V - 0.37 Ω - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh Power MOSFET
|
STMicroelectronics
|
KRF7313 |
Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
STP25NM50N STB25NM50N STB25NM50N-1 STF25NM50N STW2 |
N-CHANNEL 500V 0.11ohm - 22 A TO-220/FP/D/IPAK/TO-247 SECOND GENERATION MDmesh MOSFET
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??????浣? STMICROELECTRONICS[STMicroelectronics] 意法半导
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